Epitaxial ZnS MπS Blue Light Emitting Diode Fabricated on n^+-GaAs by Low-Pressure Metalorganic Vapor Phase Epitaxy
Epitaxial ZnS MπS Blue Light Emitting Diode Fabricated on n^+-GaAs by Low-Pressure Metalorganic Vapor Phase Epitaxy
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低压金属有机气相外延法在 n^+-GaAs 上外延 ZnS MπS 蓝光发光二极管
DOI：
10.1143/jjap.30.437
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发表时间：
1991
影响因子：
1.5
通讯作者：
S. Yamaga
中科院分区：
文献类型：
--
作者：
S. Yamaga
采用金属有机气相外延技术在n+-GaAs衬底上制备了Au/π-ZnS/n+-ZnS（金属-π-半导体）发光二极管。当向Au接触施加正、负偏置电压时，在室温下观察到蓝色电致发光（EL）。在正向偏压（Au：+）下，n+-ZnS与GaAs衬底的界面附近产生电致发光，而在反向偏压（Au：-）下，在Au接触附近观察到较亮的蓝色电致发光。结果表明，这些辐射是由加速电子在高α场中的碰撞电离引起的。
Au/π-ZnS/n+-ZnS (metal-π-semiconductor) light-emitting diodes have been fabricated on n+-GaAs substrates by metalorganic vapor phase epitaxy. Blue electroluminescence (EL) was observed at room temperature when the positive and negative bias voltage were applied to the Au contact. It has been found under the forward bias (Au:+) that EL is emitted near the interface between the n+-ZnS and GaAs substrate, while a fairly bright blue EL is observed near the Au contact under the reverse bias (Au:-). It has been shown that these emissions are caused by impact ionization of accelerated electrons in high a field.