Passively Q-Switched Integrated Tm: YAG/Ho:YAP Laser
Passively Q-Switched Integrated Tm: YAG/Ho:YAP Laser
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被动调Q集成Tm: YAG/Ho:YAP激光器
DOI：
10.1109/jphot.2021.3130419
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发表时间：
2022-04
影响因子：
2.4
通讯作者：
Wenxiong Lin
中科院分区：
文献类型：
--
作者：
Haizhou Huang;Wen Weng;Huagang Liu;Jinhui Li;Yan Ge;Hui Zheng;Wenxiong Lin
首次提出了将异质Tm：YAG和Ho：雅普晶体集成到一个单一的体结构中，用于紧凑的二极管泵浦被动调Q（PQS）Ho激光器。在Tm：YAG/Ho：雅普增益介质中获得了2129 nm的高效率激光输出，最大连续功率为6.67 W，在785 nm二极管入射功率下，斜率效率为38.3%，光转换效率为27.4%.在混合腔中采用Cr：ZnSe可饱和吸收体调制，可以抑制集成Ho激光器的自脉冲特性，获得了稳定的PQS工艺，在14.2kHz下，2053.3nm处的平均输出功率为743 mW，最短脉冲宽度为123 ns。由于48.2 MPa的最大热应力远低于每个完整截面的断裂极限（160 MPa），因此可以预期更高的激光功率。该结果为探索将其他现有的Tm掺杂和Ho掺杂基质集成为可访问的2.1 μm源铺平了道路。
We firstly propose the integration of heterogeneous Tm:YAG and Ho:YAP crystals into a single bulk structure for a compact, diode-pumped passively Q-switched (PQS) Ho laser. Efficient 2129 nm laser, with maximum CW power of 6.67 W was obtained from the Tm:YAG/Ho:YAP gain medium, with slope efficiency of 38.3% and optical conversion efficiency of 27.4% by considering the incident diode power at 785 nm. Modulated by a Cr:ZnSe saturable absorber inside a hybrid cavity, characteristic self-pulsing of the integrated Ho laser can be suppressed for a stable PQS process, where average output power of 743 mW at 2053.3 nm was obtained with shortest pulse duration of 123 ns at 14.2 kHz. As the maximum thermal stress of 48.2 MPa is far below the fracture limits of each integrated section (∼160 MPa), higher laser power can be expected. The results pave the way to explore the integration of other existing Tm-doped and Ho-doped hosts for an accessible 2.1 μm source.