Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate
Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate
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在 GaN/Si 衬底上生长的厚 (1-101) InGaN 中的应变弛豫
DOI：
10.1002/pssb.201100445
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
N.Sawaki
中科院分区：
文献类型：
--
作者：
T.Tanikawa;Y.Honda;M.Yamaguchi;H.Amano;N.Sawaki
我们证明了厚InGaN在（1’101）GaN/Si上生长。InGaN层沿< 0001>投影方向明显倾斜。铟含量较高的InGaN具有较大的倾斜度。由于InGaN和GaN之间的晶格不匹配，异质界面产生错配位错和/或堆积错误，导致较大的倾角。随着铟含量的增加，在InGaN生长的早期出现倾斜。InGaN基本放松后，结晶度饱和或提高。表面形貌也因应变松弛而变得粗糙，形成三角形晶粒，然后在合并后恢复。
We demonstrated the growth of thick InGaN on (1̄101) GaN/Si. The InGaN layer showed a marked inclination along the< 0001> projection direction. The InGaN with a higher indium composition showed a larger inclination. Owing to the lattice mismatch between InGaN and GaN, misfit dislocations and/or stacking faults are generated from the heterointerface, which resulted in a larger inclination. As the indium content increased, inclining was observed in the early stage of InGaN growth. After InGaN was substantially relaxed, the crystallinity was saturated or improved. The surface morphology also became roughened because of the strain relaxation to form triangular grains, and then recovered following the coalescence.