Prototyping of Field Emitter Array Using Focused Ion and Electron Beams
Prototyping of Field Emitter Array Using Focused Ion and Electron Beams
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使用聚焦离子束和电子束进行场发射器阵列原型设计
DOI：
10.1143/jjap.41.4311
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发表时间：
2001
影响因子：
1.5
通讯作者：
S. Okuda
中科院分区：
文献类型：
--
作者：
W. Jarupoonphol;C. Ochiai;M. Takai;A. Hosono;S. Okuda
利用聚焦离子束和电子束制备了Au门控的铂场发射阵列。Au层中的栅极开口是通过使用聚焦离子束(FIB)进行物理溅射和随后对下面的二氧化硅层进行湿法刻蚀而产生的。利用电子束(EBS)将铂金字塔形状的发射体沉积到栅开口中，在没有任何热退火过程的情况下，引起了产生场发射的化学反应。研究了不同高度的金门控场发射极阵列的PT发射体。当发射极尖端高度为570 nm和760 nm时，电子发射电流分别约为1和10微安。因此，为了优化发射行为，必须将发射器的高度调整到栅孔的上表面。
Au-gated Pt field-emitter arrays (FEAs) were fabricated using focused ion and electron beams. The gate opening in Au layers was produced by physical sputtering using focused ion beams (FIBs) and subsequent wet etching of the underlying silicon dioxide layer. Deposition of a platinum pyramid-shaped emitter into the gate opening using electron beams (EBs) induced a chemical reaction producing field emission without any thermal annealing process. Pt emitters with different heights of a Au-gated field emitter array were studied. The electron emission currents are about 1 and 10 µA for the emitter tip heights of 570 and 760 nm, respectively. Consequently, the height of the emitter must be adjusted to the top surface of gate apertures for optimization of emission behavior.