Metal-less silicon plasmonic mid-infrared gas sensor
Metal-less silicon plasmonic mid-infrared gas sensor
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DOI：
10.1117/1.jnp.10.026025
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发表时间：
2016-04-01
影响因子：
1.5
通讯作者：
Swillam, Mohamed A.
中科院分区：
文献类型：
--
作者：
Sherif, Sherif M.;Swillam, Mohamed A.
我们展示了一种超紧凑的集成硅基等离子体传感器，用于中红外（MIR）光谱范围内的芯片实验室应用。我们的传感器具有理想的功能，如设计简单和非常高的灵敏度。该传感器的设计使用的MIR中的等离子体效应的平台，使用高掺杂硅。利用该平台在MIR范围内创建无金属等离子体缝隙波导。这种等离子体激元波导对任何环境变化都高度敏感。进行了全波电磁仿真，对结构进行了设计和优化。所提出的传感器覆盖在MIR范围内的大波长跨度。我们的传感器器件实现了5000 nm/RIU的高光谱灵敏度。该结构的进一步发展进行了扩展的传感器操作多气体传感。(C)2016年，美国光电仪器工程师学会（SPIE）
We demonstrate an ultracompact integrated silicon-based plasmonic sensor for lab-on-chip applications in the mid-infrared (MIR) spectral range. Our sensor possesses desirable features such as design simplicity and very high sensitivity. The sensor is designed using a platform for plasmonic effects in the MIR using highly doped silicon. This platform is exploited to create a metal-less plasmonic slot waveguide in the MIR range. This plasmonic waveguide is highly sensitive to any environmental change. Full wave electromagnetic simulations were carried out to design and optimize the structure. The proposed sensor covers a large wavelength span in the MIR range. High spectral sensitivity of 5000 nm/RIU was achieved for our sensor device. Further development of the structure was conducted to extend the sensor operation to multigas sensing. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)