Ostwald ripening of end-of-range defects in silicon
Ostwald ripening of end-of-range defects in silicon
复制标题
硅中范围末端缺陷的奥斯特瓦尔德成熟
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
A. Claverie
中科院分区：
文献类型：
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作者：
C. Bonafos;D. Mathiot;A. Claverie
范围末端 (EOR) 缺陷是间隙型位错环，在衬底预非晶化之后以及加速退火过程中，在硅中通过离子注入形成的晶体/非晶 (c/a) 界面正下方成核。它们源自位于 c/a 界面正下方的“过量”Si 自填隙原子的高过饱和度。退火后，缺陷的平均半径增加，而缺陷的密度通过环之间硅自填隙原子的交换而降低。循环中存储的插页式广告的数量保持不变。对于足够高的热预算，当成核完成时，并且当扩展缺陷和点缺陷之间建立局部平衡时，可以通过应用于位错环几何形状的奥斯特瓦尔德熟化理论来对 EOR 缺陷的粗化进行建模。事实上，正如理论所预期的那样，环总体的平均半径的平方随着时间的推移而增加，而......
End-of-range (EOR) defects are interstitial type dislocation loops which nucleate just beneath the crystalline/amorphous (c/a) interface formed by ion implantation in Si, after the preamorphization of the substrate, and during the ramping-up of the anneal. They originate from the presence of a high supersaturation of “excess” Si self-interstitial atoms located just beneath the c/a interface. Upon annealing, the mean radius of the defects increases while their density decreases through the exchange of Si self-interstitial atoms between the loops. The number of interstitials stored in the loops stays constant. For sufficiently high thermal budgets, when the nucleation is finished, and when the local equilibrium between extended and point defects is established, the coarsening of the EOR defects can be modeled through the Ostwald ripening theory applied to the dislocation loops geometry. Indeed, and as expected from the theory, the square of the mean radius of the loop population increases with time while th...