Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
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DOI：
10.1088/0256-307x/26/4/047802
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发表时间：
2009-04-01
影响因子：
3.5
通讯作者：
Niu Zhi-Chuan
中科院分区：
文献类型：
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作者：
Guo Jie;Sun Wei-Guo;Niu Zhi-Chuan
在优化的生长温度下，通过分子束外延（MBE）在（001）GaSb衬底上生长出具有InSb-和混合样(或Ga(1-x)In(x)As（1-)ySb(y)样）界面的短周期InAs(4 ML)/GaSb（8 ML）超晶格（SLs）。拉曼散射表明，通过控制快门序列可以形成两种类型的if。x射线衍射（XRD）和原子力显微镜（AFM）结果表明，混合样if的SLs比类insb的SLs对生长温度更敏感。混合样if的光致发光光谱显示出比insb样if更强的光致发光强度和更窄的线宽。结果表明，掺杂类混合if的InAs/GaSb SLs具有更好的晶体性能和光学性能。
Short period InAs(4 ML)/GaSb(8 ML) superlattices (SLs) with InSb- and mixed-like (or Ga(1-x)In(x)As(1-)ySb(y)-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.