Graphene bilayer with a twist: Electronic structure
Graphene bilayer with a twist: Electronic structure
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DOI：
10.1103/physrevlett.99.256802
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发表时间：
2007-12-21
影响因子：
8.6
通讯作者：
Castro Neto, A. H.
中科院分区：
文献类型：
--
作者：
dos Santos, J. M. B. Lopes;Peres, N. M. R.;Castro Neto, A. H.
我们考虑一个石墨烯双层与一个相对较小的角度旋转层之间-堆叠缺陷经常看到在石墨表面-和计算的电子结构在连续近似的零能量附近。与AB堆叠双层中发生的情况相反，并且与外延石墨烯中的观察结果雅阁，我们发现：（a）低能量色散是线性的，如在单层中，但是费米速度可以显著小于单层值;（B）垂直于层的外部电场不会打开电子隙。
We consider a graphene bilayer with a relative small angle rotation between the layers - a stacking defect often seen in the surface of graphite - and calculate the electronic structure near zero energy in a continuum approximation. Contrary to what happens in an AB stacked bilayer and in accord with observations in epitaxial graphene, we find: (a) the low energy dispersion is linear, as in a single layer, but the Fermi velocity can be significantly smaller than the single-layer value; (b) an external electric field, perpendicular to the layers, does not open an electronic gap.