Plasmon-Induced Doping of Graphene
Plasmon-Induced Doping of Graphene
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DOI：
10.1021/nn304028b
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发表时间：
2012-11-01
期刊：
影响因子：
17.1
通讯作者：
Halas, Naomi J.
中科院分区：
文献类型：
--
作者：
Fang, Zheyu;Wang, Yumin;Halas, Naomi J.
金属纳米天线在共振照明下，将非平衡热电子注入附近的石墨烯结构，有效地掺杂材料。在激光激发后，观察到等离子体天线图案化的石墨烯片的载流子密度的显著变化，使狄拉克点移位，如从门控传输特性确定的。这种效应是由于共振激发后纳米天线等离子体的衰变产生的热电子。该效应是高度可调谐的，这取决于等离子体天线的谐振频率以及入射激光功率。热电子掺杂的石墨烯代表了一种新型的杂化材料，在光电器件应用中显示出巨大的前景。
A metallic nanoantenna, under resonant illumination, injects nonequilibrium hot electrons into a nearby graphene structure, effectively doping the material. A prominent change in carrier density was observed for a plasmonic antenna-patterned graphene sheet following laser excitation, shifting the Dirac point, as determined from the gate-controlled transport characteristic. The effect is due to hot electron generation resulting from the decay of the nanoantenna plasmon following resonant excitation. The effect is highly tunable, depending on the resonant frequency of the plasmonic antenna, as well as on the incident laser power. Hot electron-doped graphene represents a new type of hybrid material that shows great promise for optoelectronic device applications.