X-Ray and Far-uv Photoemission from Amorphous and Crystalline Films of Se and Te
X-Ray and Far-uv Photoemission from Amorphous and Crystalline Films of Se and Te
复制标题
Se 和 Te 的非晶态和晶体薄膜的 X 射线和远紫外光电发射
DOI：
10.1103/physrevb.8.2833
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发表时间：
1973
影响因子：
3.7
通讯作者：
J. Tejeda
中科院分区：
文献类型：
--
作者：
N. J. Shevchik;M. Cardona;J. Tejeda
用1486.6 eV(Al Kα)、40.8 eV和21.2eV(He II和He I)的光子激发能对Se和Te的非晶态和晶态薄膜进行了光电子能谱实验。从这些实验中，我们确定了价态密度、芯能级的结合能、特征损耗函数和等离子体频率。比较了非晶态和晶态的实验态密度和理论态密度。基于价态密度的简单模型很好地描述了Te在带间跃迁区域的光学性质。证明了Se-3d能级的光吸收峰可能来源于激子。
Photoemission experiments have been performed on amorphous and crystalline films of Se and Te using photon excitation energies of 1486.6 (Al K α), 40.8, and 21.2 eV (He II and He I). From these experiments we have determined the densities of valence states, the binding energies of the core levels, the characteristic loss functions, and the plasma frequencies. Comparisons of the experimental to the theoretical densities of states are made for both the amorphous and crystalline forms. The optical properties of Te in the region of interband transitions are shown to be described well by a simple model based on the density of valence states. Evidence that the optical absorption peak from the Se 3 d level may be of excitonic origin is presented.