Cubic-on-cubic growth of a MgO(001) thin film prepared on Si(001) substrate at low ambient pressure by the sputtering method
Cubic-on-cubic growth of a MgO(001) thin film prepared on Si(001) substrate at low ambient pressure by the sputtering method
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DOI：
10.1209/0295-5075/81/46001
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发表时间：
2008-01-01
期刊：
影响因子：
1.8
通讯作者：
Akiyama, K.
中科院分区：
文献类型：
--
作者：
Kaneko, S.;Funakubo, H.;Akiyama, K.
采用金属靶射频溅射法在Si（001）衬底上制备了氧化镁（MgO）薄膜。尽管MgO（100）和Si（100）之间存在较大的晶格失配，并且晶胞沿着面外和面内方向收缩，但X射线衍射证实了MgO（001）的外延生长具有立方上双晶排列。外延生长被描述为一个域外延的关系与域失配组成的（k × 1）的Si衬底和（m × n）的MgO膜的晶格单元。为了可视化具有k、l、m和n的组合的结构域错配，在极坐标上描绘相干应变。畴失配估计为一个小的值，这是进一步减少的外延MgO膜中的晶胞的收缩。版权所有（C）EPLA，2008.
Magnesium oxide (MgO) films were prepared on a Si(001) substrate by the rf sputtering method at low ambient pressure using a metal target. The X-ray diffraction verified the epitaxial growth of MgO(001) with a cubic-on-cubic arrangement despite the large lattice mismatch between MgO(100) and Si(100), and contractions of the unit cell along both the out-of-plane and in-plane directions. Epitaxial growth is described as a domain epitaxial relation with a domain mismatch consisting of (k x l) lattice units of the Si substrate and (m x n) ones of the MgO film. To visualize the domain mismatch with combinations of k, l, m and n, coherent strains were depicted on polar coordinates. The domain mismatch was estimated as a small value, which was further decreased by the contraction of the unit cell in the epitaxial MgO film. Copyright (C) EPLA, 2008.