One-step fast deposition of thick epitaxial CdZnTe film on (001)GaAs by close-spaced sublimation
One-step fast deposition of thick epitaxial CdZnTe film on (001)GaAs by close-spaced sublimation
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DOI：
10.1039/c1ce06412f
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发表时间：
2012-02
期刊：
影响因子：
3.1
通讯作者：
Junning Gao;W. Jie;Yanyan Yuan;Tao Wang;Yong Xie;Ya-bao Wang;Yuhong Huang;Junli Tong;Hui Yu-Hui-Y
中科院分区：
文献类型：
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作者：
Junning Gao;W. Jie;Yanyan Yuan;Tao Wang;Yong Xie;Ya-bao Wang;Yuhong Huang;Junli Tong;Hui Yu-Hui-Y
通过近距离升华的简单一步工艺，沉积速率高达 1 μm min−1，成功地在 (001)GaAs 衬底上沉积了厚外延 CdZnTe 薄膜。通过平面 SEM、XRDθ–2θ 和 phi 扫描以及横截面 SEM 和 HRTEM 分析证明了薄膜的明确外延特征。发现了一种新的外延模式。该薄膜在早期阶段是多晶的，随着沉积的进行而发展成外延层。多晶向单晶的转变是通过层状结构晶粒的横向过度生长和自组织来完成的。
Thick epitaxial CdZnTe film has been successfully deposited on (001)GaAs substrate through a simple one-step process by close-spaced sublimation with a deposition rate of up to 1 μm min−1. Well-defined epitaxial features of the film are proved by the plan view SEM, XRDθ–2θ and ϕ scan, and the cross-sectional SEM and HRTEM analysis. A novel epitaxy mode has been discovered. The film is polycrystalline at the early stage and develops into an epitaxial layer as the deposition proceeds. The polycrystalline to single crystalline transition is completed through the lateral overgrowth and the self-organization of the layer-structured grains.