Vertical alignment of liquid crystals on a fully oxidized HfO2 surface by ion bombardment
Vertical alignment of liquid crystals on a fully oxidized HfO2 surface by ion bombardment
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DOI：
10.1063/1.3126961
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发表时间：
2009-06-01
影响因子：
4
通讯作者：
Seo, Dae-Shik
中科院分区：
文献类型：
--
作者：
Lee, Won-Kyu;Oh, Byeong-Yun;Seo, Dae-Shik
利用离子轰击技术在垂直(同向)取向的超薄HfO2薄膜上制备了0.9V阈值驱动的高性能液晶。采用原子层沉积的方法在双层HfO2/Al_2O_3超薄高质量薄膜上获得了液晶取向。X射线光电子能谱表明，离子轰击引起了HfO2薄膜表面的完全氧化，使Hf4f谱向较低的结合能移动。离子轰击后Hf4f峰强度的增加证实了非化学计量比的HfOx转变为完全氧化的HfO2表面。
High-performance liquid crystals (LCs) driven at a 0.9 V threshold were demonstrated on very thin HfO2 films with vertical (homeotropic) alignment by ion bombardment. Atomic layer deposition was used to obtain LC orientation on ultrathin high-quality films of double-layer HfO2/Al2O3. X-ray photoelectron spectroscopy indicated that full oxidization of HfO2 film surfaces was induced by ion bombardment, shifting the Hf 4f spectra to lower binding energies. The increased intensities of the Hf 4f peaks after ion bombardment confirmed that nonstoichiometric HfOx was converted to the fully oxidized HfO2 surfaces.