Ferroelectric memristive effect in BaTiO3 epitaxial thin films
Ferroelectric memristive effect in BaTiO3 epitaxial thin films
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BaTiO3 外延薄膜中的铁电忆阻效应
DOI：
10.1088/0022-3727/47/36/365102
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发表时间：
2014-09-10
影响因子：
3.4
通讯作者：
Zhang, W. F.
中科院分区：
文献类型：
--
作者：
Chen, X.;Jia, C. H.;Zhang, W. F.
在掺Nb的SrTiO 3（NSTO）（0 0 1）衬底上外延生长了BaTiO 3（BTO）薄膜。在Pt/BTO/NSTO异质结中观察到铁电阻变效应和忆阻行为。它在不同的极化状态下具有两种电阻状态，并且两种电流-电压曲线都是非线性的，略微不对称并且没有不连续性，与其他电阻开关器件经常发生的情况相反。此外，在铁电忆阻器应用中，通过改变脉冲电压的幅值，电阻可连续调谐至1.3× 105%。此外，该器件具有优异的保持性和再现性。上述现象可以通过考虑铁电极化对BTO/NSTO界面势垒宽度和高度的调制来定性解释。
Epitaxial BaTiO 3 (BTO) films have been grown on Nb-doped SrTiO 3 (NSTO)(0 0 1) substrate. The ferroelectric resistive switching effect and memristive behaviours have been observed in Pt/BTO/NSTO heterostructures. It exhibits two resistance states under different polarization, and both current–voltage curves are nonlinear, slightly asymmetric and free of discontinuities, in contrast with what often occurs with other resistive switching devices. In addition, the resistance can be continuously tuned up to 1.3× 10 5% by varying pulse voltage amplitudes for the ferroelectric memristor application. Moreover, the device exhibits excellent retention and reproducibility. The above phenomena can be qualitatively explained by considering the modulation of the width and height of the potential barrier at the BTO/NSTO interface by ferroelectric polarization.