Single photoelectron trapping, storage, and detection in a one-electron quantum dot
Single photoelectron trapping, storage, and detection in a one-electron quantum dot
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DOI：
10.1063/1.2134888
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发表时间：
2005-12-01
影响因子：
3.2
通讯作者：
Jiang, HW
中科院分区：
文献类型：
--
作者：
Rao, DS;Szkopek, T;Jiang, HW
在用单个电子对量子点进行静电清空和再填充方面，已经取得了相当大的进展。通常情况下，量子点是由GaAs/Al(Y)Ga(1-y)As调制掺杂异质结上的静电门来定义的。我们报告了由单个光子产生的单个光电子填充这样一个量子点的过程。静电点可以在每个光子到达之前以受控的方式清空和重置。被捕获的光电子被集成在静电势陷阱附近的点接触晶体管检测到。每个存储的光电子在晶体管沟道电流中引起持续的负阶跃。这种可控的、良性的、单一的光电子探测器可以在飞行的光子量子比特和存储的电子量子比特之间进行信息传输。
There has been considerable progress in electrostatically emptying, and refilling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/Al(y)Ga(1-y)As modulation-doped heterostructure. We report the filling of such a quantum dot by a single photoelectron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photoelectron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photoelectron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photoelectron detector could allow for information transfer between flying photon qubits and stored electron qubits.