NANOHOLES ON SILICON SURFACE CREATED BY ELECTRON IRRADIATION UNDER ULTRAHIGH VACUUM ENVIRONMENT
NANOHOLES ON SILICON SURFACE CREATED BY ELECTRON IRRADIATION UNDER ULTRAHIGH VACUUM ENVIRONMENT
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超高真空环境下电子辐照在硅表面形成纳米孔
DOI：
10.1103/physrevlett.79.2994
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发表时间：
1997
影响因子：
8.6
通讯作者：
T. Ichihashi
中科院分区：
文献类型：
--
作者：
S. Takeda;K. Koto;S. Iijima;T. Ichihashi
我们发现薄硅晶体中形成了一种新颖的结构。超高真空环境（1.0×10−7 Pa）中的均匀强度电子辐照在电子出口表面引入了直径为 2 至 3 nm、深度为数纳米的孔阵列。孔的分布平均间隔为 6 nm。照射温度需要低于300℃。无论表面如何，即{111}和{110}，都会发生孔的形成。有人认为这种现象归因于涉及电子辐照积累的表面空位的旋节线不稳定性。
We have found that a novel structure is formed in a thin silicon crystal. Uniform-intensity electron irradiation in an ultrahigh vacuum environment (1.0× 10− 7 Pa) introduces an array of holes 2 to 3 nm in diameter and several nanometers deep at the electron exit surfaces. The holes are distributed in average 6 nm apart. The irradiation temperature is needed to be below 300 C. The formation of the holes occurs regardless of the surfaces, ie,{111} and {110}. It is suggested that the phenomenon is attributed to the spinodal instability involving the surface vacancies accumulated by electron irradiation.