Control of compound semiconductor–insulator interfaces by an ultrathin molecular‐beam epitaxy Si layer
Control of compound semiconductor–insulator interfaces by an ultrathin molecular‐beam epitaxy Si layer
复制标题
通过超薄分子束外延硅层控制化合物半导体-绝缘体界面
DOI：
10.1116/1.584616
复制
发表时间：
1989
影响因子：
1.4
通讯作者：
K. Matsuzaki
中科院分区：
文献类型：
--
作者：
H. Hasegawa;M. Akazawa;H. Ishii;K. Matsuzaki
基于无序诱导能隙态（DIGS）模型，利用表面氧化硅（Si）界面控制层（ICL）对GaAs和In0.53Ga0.47As的绝缘体-半导体（I-S）界面进行控制.用分子束外延（MBE）在GaAs或InGaAs上生长Si ICL，并部分氧化。然后，通过原位光CVD工艺沉积厚SiO2或Si 3 N4层。原位XPS分析证实了预期结构的形成。在GaAs结构中，带隙中间区的态密度显著降低。然而，界面费米能级被导带最小值附近的高密度界面态所阻挡，这与最近报道的“完全无钉扎”相反。从能带排列来看，这些态是Si衍生的本征态。另一方面，在InGaAs结构中不存在这样的状态，并且在退火后实现了具有非常小的滞后的完全“未钉扎”行为。结果被解释为成功的方面.
Based on the disorder induced gap state (DIGS) model, an attempt is made to control the insulator–semiconductor (I–S) interfaces of GaAs and In0.53Ga0.47As by an ultrathin surface‐oxidized silicon (Si) interface control layer (ICL). A Si ICL is grown on GaAs or InGaAs by molecular beam epitaxy (MBE), and is partially oxidized. Then, a thick SiO2 or Si3N4 layer is deposited by in situ photo‐CVD processes. An in situ XPS analysis confirms formation of the intended structures. In the GaAs structure, the state density in the midgap region is remarkably reduced. However, the interface Fermi level is blocked by a high density of interface states near the conduction band minimum, contrary to the recent reports of ‘‘complete unpinning.’’ These states are Si‐derived intrinsic states, judging from the band line‐up. On the other hand, no such states exist in the InGaAs structure and completely ‘‘unpinned’’ behavior with a very small hysteresis is realized after annealing. The result is interpreted in terms of succes...