Reactivity and thermal behaviour of Cu–Si/SiC composites: effects of SiC oxidation
Reactivity and thermal behaviour of Cu–Si/SiC composites: effects of SiC oxidation
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DOI：
10.1179/174328406x131000
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发表时间：
2006-12
影响因子：
1.8
通讯作者：
J. Narciso;L. Weber;J. Molina;A. Mortensen;E. Louis
中科院分区：
文献类型：
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作者：
J. Narciso;L. Weber;J. Molina;A. Mortensen;E. Louis
研究了压力渗透法制备的 Cu-Si/SiC 颗粒增强复合材料的导热性和热膨胀性。为了减少（或避免）液态 Cu 与 SiC 增强材料的反应（这对导热性和热膨胀系数都有有害影响），SiC 颗粒在渗透前在 1000°C 下进行氧化。虽然可以观察到反应程度略有降低，表现为热导率略有增加，但热导率的绝对值非常低（40 至 70 W m−1 K−1 之间），甚至低于陶瓷相体积分数相似的 Cu/SiO2 参考样品（160 W m−1 K−1）。预氧化处理将热膨胀系数从 9 ppm K−1 增加到 11 ppm K−1。
The thermal conductivity and thermal expansion of Cu–Si/SiC particle reinforced composites, fabricated by pressure infiltration, have been investigated. To reduce (or avoid) reaction of liquid Cu with the SiC reinforcement, which has deleterious effects on both thermal conductivity and thermal expansion coefficient, the SiC particles were oxidised at 1000°C before infiltration. While a small reduction in extent of reaction could be observed, manifest in a slight increase of thermal conductivity, the absolute value of the thermal conductivity was very low (between 40 and 70 W m−1 K−1), which is even lower than that of a Cu/SiO2 reference sample with a similar volume fraction of ceramic phase (160 W m−1 K−1). The pre-oxidation treatment increased the coefficient of thermal expansion from 9 to 11 ppm K−1.