SOI-based devices and technologies for High Voltage ICs
SOI-based devices and technologies for High Voltage ICs
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DOI：
10.1109/bipol.2007.4351842
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发表时间：
2007-10
期刊：
影响因子：
--
通讯作者：
F. Udrea
中科院分区：
文献类型：
--
作者：
F. Udrea
本文综述了高压集成电路（HVIC）中绝缘体上硅（SOI）器件和工艺的现状，并讨论了该领域的新趋势。本文重点介绍了新的SOI基RESURF概念，如超结，线性梯度剖面或SOI膜技术。由于其固有的隔离特性，SOI是双极MOS开关（如LIGBT）的理想衬底。事实上，市场上唯一的LIGBT产品是使用绝缘体隔离（SOI类型）和SOI技术制造的。文章最后从比罗恩与击穿电压的关系方面概述了技术生存的激烈斗争。在这里，SOI与准垂直DMOS技术和先进的体BCD技术竞争。
This paper reviews the current status Silicon-On-Insulator (SOI) devices and technologies for high voltage integrated circuits (HVICs) and discusses new trends in the field. The paper focuses on novel SOI-based RESURF concepts such as superjunction, linearly graded profile or SOI membrane technology. Due to its intrinsic isolation properties, the SOI is the ideal substrate for bipolar MOS switches such as the LIGBT. In fact, the only LIGBT products on the market are fabricated using Dielectric Isolation (type of SOI) and SOI technology. The paper finishes with an overview of the fierce fight of technology survival in terms of specific Ron vs breakdown voltage. Here the SOI competes with quasi-vertical DMOS technologies and advanced bulk BCD technologies.