Observation of full charge collection efficiency in heavily irradiated n+p strip detectors irradiated up to 3×1015 neq/cm2
Observation of full charge collection efficiency in heavily irradiated n+p strip detectors irradiated up to 3×1015 neq/cm2
复制标题
观察辐照强度高达 3×1015 neq/cm2 的强辐照 n+p 条带探测器中的完全电荷收集效率
DOI：
10.1016/j.nima.2009.08.004
复制
发表时间：
2010
影响因子：
1.4
通讯作者：
M. Zavrtanik
中科院分区：
文献类型：
--
作者：
I. Mandić;V. Cindro;A. Gorišek;G. Kramberger;M. Mikuž;M. Zavrtanik
在这项工作中，我们报告的测量信号所造成的快速电子从{sup 90}Sr源检测到的n型读出带植入p型体硅，读出与SCT 128芯片。用反应堆中子辐照到10{sup 16} n{sub eq}/cm{sup 2}的探测器进行电荷收集测量，直到超过2000 V的非常高的反向偏置电压。用辐照到3x 10 {sup 15} n{sub eq}/cm{sup 2}的探测器测量的收集电荷的最可能值与辐照前测量的值一样高。辐照到10{sup 16} n{sub eq}/cm{sup 2}的探测器也表现出非常好的性能。由于高辐射硅探测器的大电阻，它们可以用高正向电压偏置，从而允许在正向偏置操作模式下也执行电荷收集测量。在辐照探测器的电荷收集的模拟进行了比较的测量。
In this work we report measurements of signals caused by fast electrons from a {sup 90}Sr source detected by n-type readout strips implanted in p-type bulk silicon, read out with a SCT128 chip. Charge collection measurements with detectors irradiated with reactor neutrons up to 10{sup 16} n{sub eq}/cm{sup 2} were performed up to very high reverse bias voltages of over 2000 V. The most probable value of collected charge measured with detectors irradiated up to 3x10{sup 15} n{sub eq}/cm{sup 2} was as high as that measured before irradiation. Detectors irradiated to 10{sup 16} n{sub eq}/cm{sup 2} also exhibited very good performance. Because of the large resistance of the heavily irradiated silicon detectors they can be biased with a high forward voltage, allowing charge collection measurements to also be performed in the forward bias mode of operation. Simulations of charge collection in an irradiated detector were compared to measurements.