Mode Behavior of VCSELs With Impurity-Induced Disordering
Mode Behavior of VCSELs With Impurity-Induced Disordering
复制标题
具有杂质引起的无序的 VCSEL 的模式行为
DOI：
--
复制
发表时间：
2017
影响因子：
2.6
通讯作者：
J. Dallesasse
中科院分区：
文献类型：
--
作者：
T. O’Brien;B. Kesler;Saoud Al Mulla;J. Dallesasse
这封信探讨了氧化物限制的垂直腔面发射激光器（VCSEL）的模式行为与不同的发射孔径定义的杂质诱导无序（IID）通过封闭的锌扩散。一个1-D平面波传播方法被用来计算作为IID强度和深度的函数的镜损耗。该装置被制造成具有范围从氧化物孔的大约70%-110%的掩蔽区域，该氧化物孔限定了被设计成主要与基模重叠的未修改的发射孔。横模激射特性和模式相关热特性的分析表明，与IID环和VCSEL腔的支持光学模式之间的重叠增加相关联的热性能降低。在3 μ m的功率下，获得了1.6mW的单模输出，边模抑制比超过30 dBm<inline-formula><tex-math notation="LaTeX"> ext{m}$</tex-math></inline-formula>器件，IID定义的输出孔径约为<inline-formula><tex-math notation="LaTeX">1.3 μ ext{m}$</tex-math></inline-formula>。最佳IID发射孔径氧化物孔径比最大化的单基模输出功率的实验测量。
This letter explores the modal behavior of oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with varying emission apertures defined by impurity-induced disordering (IID) via closed ampoule zinc diffusion. A 1-D plane wave propagation method is used to calculate the mirror loss as a function of IID strength and depth. The devices are fabricated with masked areas ranging from approximately 70%–110% of the oxide aperture defining an unmodified emission aperture designed to overlap mainly with the fundamental mode. An analysis of the transverse mode lasing characteristics and mode-dependent thermal characteristics demonstrates a decrease in thermal performance associated with the increasing overlap between the IID ring and supported optical modes of the VCSEL cavity. A single-mode output power of 1.6 mW with over 30 dBm side-mode suppression ration is achieved from a <inline-formula> <tex-math notation="LaTeX">$3~mu ext{m}$ </tex-math></inline-formula> device with an IID-defined output aperture of approximately <inline-formula> <tex-math notation="LaTeX">$1.3~mu ext{m}$ </tex-math></inline-formula>. The optimal IID emission aperture to oxide aperture ratio for maximizing the single-fundamental-mode output power is experimentally measured.