Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure
Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure
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DOI：
10.1063/1.3076126
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发表时间：
2009-01
影响因子：
4
通讯作者：
T. Nowozin;A. Marent;M. Geller;D. Bimberg;N. Akçay;N. Öncan
中科院分区：
文献类型：
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作者：
T. Nowozin;A. Marent;M. Geller;D. Bimberg;N. Akçay;N. Öncan
用电容-电压谱研究了GaAs_（0.4）Sb_（0.6）/GaAs自组织量子点在p-n二极管中的空穴发射过程。所介绍的方法允许调查的温度和电场的载流子发射的时间常数从低于纳秒高达数千秒的依赖性。不同的发射过程是明确区分，如隧穿，声子辅助隧穿，和热激活，每一个重要的量子点为基础的存储器结构。对于约200 kV/cm的电场，擦除时间被确定为1.5 ms。在500 kV/cm下，预测10 ns足以用于快速擦除。
Hole emission processes from self-organized GaAs0.4Sb0.6/GaAs quantum dots embedded in a p-n diode are studied by capacitance-voltage spectroscopy. The method introduced allows the investigation of the temperature and electric field dependence of carrier emission with time constants from below nanoseconds up to thousands of seconds. Different emission processes are clearly distinguished, such as tunneling, phonon-assisted tunneling, and thermal activation, each important for quantum-dot-based memory structures. The erase time was determined to 1.5 ms for an electric field of about 200 kV/cm. At 500 kV/cm, 10 ns are predicted sufficient for fast erasing.