Hall effect in the MnBi2Te4 crystal using silicon nitride nanomembrane via contacts
Hall effect in the MnBi2Te4 crystal using silicon nitride nanomembrane via contacts
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DOI：
10.1063/5.0170335
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发表时间：
2023-11
影响因子：
4
通讯作者：
Mickey Martini;T. Confalone;Yejin Lee;Bastian Rubrecht;G. Serpico;Sanaz Shokri;C. N. Saggau;D. Montemurro;Valerii M. Vinokur;A. Isaeva;K. Nielsch;Nicola Poccia
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文献类型：
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作者：
Mickey Martini;T. Confalone;Yejin Lee;Bastian Rubrecht;G. Serpico;Sanaz Shokri;C. N. Saggau;D. Montemurro;Valerii M. Vinokur;A. Isaeva;K. Nielsch;Nicola Poccia
二维货车德瓦尔斯（vdW）系统MnBi 2 Te 4利用能带拓扑结构和内禀磁性之间的相互作用，为实现奇异量子现象提供了理想的平台，并在反铁磁自旋电子技术的新兴领域提供了巨大的机会。然而，MnBi 2 Te 4基纳米器件的制造受到这种材料的高灵敏度的阻碍，这种材料在暴露于空气或高温时会迅速降解。在这里，我们展示了一种替代路线的制造VDW-MnBi 2 Te 4为基础的电子器件使用低温干转移嵌入在无机氮化硅膜的可印刷电路。薄晶体和膜的顶表面之间的电连接通过通孔接触建立。我们的磁输运研究表明，这种创新的通过接触的方法可以探索MnBi 2 Te 4类敏感的二维材料和工程合成异质结构，以及基于二维vdW系统的复杂电路。
Utilizing an interplay between band topology and intrinsic magnetism, the two-dimensional van der Waals (vdW) system MnBi2Te4 provides an ideal platform for realizing exotic quantum phenomena and offers great opportunities in the emerging field of antiferromagnetic spintronic technology. Yet, the fabrication of MnBi2Te4-based nanodevices is hindered by the high sensitivity of this material, which quickly degrades when exposed to air or to elevated temperatures. Here, we demonstrate an alternative route of fabricating vdW-MnBi2Te4-based electronic devices using the cryogenic dry transfer of a printable circuit embedded in an inorganic silicon nitride membrane. The electrical connections between the thin crystal and the top surface of the membrane are established through via contacts. Our magnetotransport study reveals that this innovative via contact approach enables exploring the MnBi2Te4-like sensitive 2D materials and engineering synthetic heterostructures as well as complex circuits based on the two-dimensional vdW systems.