Free-Space Schottky Graphene/Silicon Photodetectors Operating at 2 μm
Free-Space Schottky Graphene/Silicon Photodetectors Operating at 2 μm
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DOI：
10.1021/acsphotonics.8b01037
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发表时间：
2018-11-01
期刊：
影响因子：
7
通讯作者：
Coppola, Giuseppe
中科院分区：
文献类型：
--
作者：
Casalino, Maurizio;Russo, Roberto;Coppola, Giuseppe
本文介绍了工作波长为2 μ m的肖特基石墨烯/硅光电探测器的设计、制造和表征。这些石墨烯/硅结在280-315 K的温度范围内使用电学和光学测量进行了仔细的表征。在零偏置条件下，光电探测器在室温下的外部响应率为0.16 mA/W，这与理论预测非常吻合。此外，还从噪声等效功率和工作带宽两个方面讨论了器件的性能。据我们所知，这是第一个设计用于在2 μ m自由空间工作的硅基光电探测器。所提出的器件将为开发工作在2 μ m的混合石墨烯-硅自由空间照明光电探测器铺平道路，用于包括自由空间光通信，光学相干层析成像和光基雷达系统在内的应用。
This paper presents the design, fabrication, and characterization of Schottky graphene/silicon photodetectors that operate at a wavelength of 2 mu m. These graphene/silicon junctions are carefully characterized using electric and optical measurements over the temperature range from 280-315 K. The photodetectors show external responsivity of 0.16 mA/W at room temperature under zero bias conditions, which is in excellent agreement with the theoretical predictions. In addition, the device performance is discussed in terms of the noise equivalent power and operating bandwidth. To the best of our knowledge, these are the first Si-based photodetectors designed for operation in free space at 2 mu m. The proposed devices will pave the way toward development of hybrid graphene-Si free-space illuminated photodetectors operating at 2 mu m for applications including free-space optical communications, optical coherence tomography and light-based radar systems.