Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor
Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor
复制标题
四元GaMnAsP铁磁半导体的磁各向异性
DOI：
10.1063/1.4972856
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发表时间：
2017
期刊：
影响因子：
1.6
通讯作者：
M. Dobrowolska
中科院分区：
文献类型：
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作者：
Hakjoon Lee;Jiho Chang;Phunvira Chongthanaphisut;Sangyeop Lee;Seonghoon Choi;S. Bac;Alviu Rey Nasir;Sang Hoon Lee;A. Pardo;S. Dong;Xiang Li;X. Liu;J. Furdyna;M. Dobrowolska
我们报告了通过磁输运对四元 GaMnAsP 铁磁半导体薄膜的磁各向异性进行系统研究。霍尔测量表明，随着 P 并入 GaMnAs 薄膜中，易磁化方向从面内转变为面外。通过使用相干旋转模型将霍尔电阻数据的角度依赖性与磁自由能拟合，获得了薄膜磁各向异性的定量信息。磁各向异性参数值表明，随着这些薄膜中P含量的增加，面内各向异性减小，面外各向异性增加。 GaMnAsP 层的面外磁各向异性通过低温退火进一步增强。通过优化生长和退火条件，我们能够在这种四元薄膜中获得125 K的居里温度，并具有很强的面外各向异性。这项研究表明，GaMnAsP 薄膜的磁各向异性可以通过调节 c...
We report a systemeatic investigation of magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor films by magneto-transport. Hall measurements showed a transition of the easy magnetization direction from in-plane to out-of plane with incorporation of the P into the GaMnAs films. Quantitative information on magnetic anisotropy of the films is obtained by fitting the angular dependence of Hall resistance data to magnetic free energy using the coherent rotation model. Values of magnetic anisotropy parameters show that in-plane anisotropy decreases and out-of-plane anisotropy increases with increasing P content in these films. The out-of-plane magnetic anisotropy in GaMnAsP layers is further enhanced by low temperature annealing. By optimizing the growth and annealing conditions, we were able to obtain a Curie temperature of 125 K in such quaternary films, with strong out-of-plane anisotropy. This study showed that the magnetic anisotropy of the GaMnAsP films can be controlled by adjusting the c...