3326-V Modulation-Doped Diamond MOSFETs
3326-V Modulation-Doped Diamond MOSFETs
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3326V 调制掺杂金刚石 MOSFET
DOI：
10.1109/led.2022.3181444
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
and Makoto Kasu
中科院分区：
文献类型：
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作者：
Niloy Chandra Saha ;Seong-Woo Kim ;Toshiyuki Oishi ;and Makoto Kasu
这封信报道了3.3千伏调制掺杂金刚石金属氧化物半导体场效应晶体管（MOSFET）的制造和表征。通过在Al 2 O3栅层中掺杂NO2 delta来进行调制掺杂。的调制掺杂的金刚石MOSFET的栅极长度显示出的最大漏电流密度为0.42 A/mm，估计的特定导通电阻。因此，Baliga优值（BFOM）确定为820.6 MW/cm 2。获得了109.89 mV/dec的亚阈值摆幅，表明具有cm − 2 eV −1界面态密度的高质量Al 2 O3/金刚石界面。在阈值附近，最大有效迁移率估计为496 cm 2/Vs，预计最大输出功率密度为46.5 W/mm。
This letter reports the fabrication and characterization of 3.3-kV modulation-doped diamond metal–oxide–semiconductor field-effect transistors (MOSFETs). The modulation doping was performed via NO2delta doping in the Al2O3gate layer. The modulation-doped diamond MOSFET with a gate length ofshowed a maximum drain current density of 0.42 A/mm, with an estimated specific ON-resistance of. Therefore, the Baliga’s figure-of-merit (BFOM) was determined to be 820.6 MW/cm2. A subthreshold swing of 109.89 mV/dec, indicative of a high-quality Al2O3/diamond interface with an interfacial state density ofcm−2eV−1, was obtained. The maximum effective mobility was estimated to be 496 cm2/Vs near the threshold, and a maximum output power density of 46.5 W/mm was projected.