Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations
Comparative Evaluation of Forward Voltage Degradation due to Propagating and Converted Basal Plane Dislocations
复制标题
传播和转换基面位错引起的正向电压下降的比较评估
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
H. Osawa
中科院分区：
文献类型：
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作者：
Y. Nishihara;Koji Kamei;K. Momose;H. Osawa
本研究探讨了由SSF膨胀引起的正向电压退化与（a）SiC衬底和外延层中的BPD密度以及（B）PIN二极管施加正向电流期间的温度之间的关系。漂移层中的BPD引起的Vf偏移仅取决于BPD密度。然而，最初没有观察到的Vf位移和BPD密度之间的相关性在基板上，而是观察到的Vf位移和器件温度之间的强相关性时，施加电流应力测量。因此，当我们选择当时显示相同温度的样品时，观察到SiC衬底中Vf偏移和BPD密度之间的相关性，斜率对应于前者，漂移层关系。因此，由于SiC衬底中的高BPD密度，抑制由于该区域中的BPD密度引起的Vf偏移是非常重要的，因此提出了方法的组合以减少总体正向电压劣化。
This study investigated the relationship between the forward voltage degradation induced by SSF expansion and (a) BPD density in substrates and epitaxial layers of SiC, and (b) the temperature during the application forward current to the pin diodes. The Vf shift caused by the BPDs in the drift layer simply depended on the BPD density. However, no correlation was initially observed between the Vf shift and BPD density in the substrate; instead a strong correlation was observed between the Vf shift and the device temperature measured when applying the current stress. Thus when we selected samples which show the same temperature at that time, a correlation was observed between the Vf shift and the BPD density in the SiC substrate, with the slope corresponding to the former, drift layer relationship. Therefore, due to the high BPD density in the SiC substrate, suppressing the Vf shift due to BPD density in this region is highly important, and a combination of approaches is therefore proposed in order to reduce the overall forward voltage degradation.