Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source
Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source
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使用单甲基硅烷作为硅源，通过等离子体增强化学气相沉积薄膜沉积硅掺入类金刚石碳
DOI：
10.1143/jjap.47.8491
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发表时间：
2008
影响因子：
1.5
通讯作者：
M. Mashita
中科院分区：
文献类型：
--
作者：
H. Nakazawa;Y. Asai;T. Kinoshita;M. Suemitsu;Toshimi Abe;K. Yasui;T. Itoh;T. Endoh;Y. Narita;A. Konno;Y. Enta;M. Mashita
以甲烷、氩气和单甲基硅烷（MMS; CH3SiH3）为硅源，采用射频等离子体增强化学气相沉积方法制备了硅掺杂类金刚石（DLC）薄膜，并对薄膜的结构和力学性能进行了研究。随着MMS流动比的增加，DLC膜的沉积速率和Si原子分数[Si/(Si+C)]增加。当MMS流动比[MMS/(MMS+CH4)]为3%时，Si含量约为13%，表明与使用常规C和Si源沉积的膜相比，使用CH4和MMS组合沉积的膜具有较高的Si含量。在一定MMS流量下，随着Ar流量的减小，Si分数也随之增加。在MMS流量比为15%和30%的情况下，沉积过程中在表面观察到许多以Si为主要成分的颗粒，粒径为0.3-1µm。膜内的压缩内应力随MMS流量比和/或Ar流量的增加而减小。内应力的减小可能是由于薄膜中Si-C和Si-H键的形成以及Ar+离子轰击使三维刚性网络松弛所致。
We have deposited Si-incorporated diamond-like carbon (DLC) films by radio-frequency plasma-enhanced chemical vapor deposition using methane, argon, and monomethylsilane (MMS; CH3SiH3) as a silicon source, and have investigated the structural and mechanical properties of the films. The deposition rate and Si atomic fraction [Si/(Si+C)] in the DLC films increased with increasing MMS flow ratio. The Si fraction was approximately 13% at a MMS flow ratio [MMS/(MMS+CH4)] of 3%, showing that the deposition using a combination of CH4 and MMS produces films with high Si content compared with those deposited using conventional C and Si sources. The Si fraction was also found to increase with a decrease in Ar flow rate under a constant MMS flow ratio. Many particles composed mainly of Si, whose size was 0.3–1 µm in diameter, were observed on the surface when deposition was carried out at MMS flow ratios of 15 and 30%. Compressive internal stress in the films decreased with the MMS flow ratio and/or with the Ar flow rate. The decrease in internal stress is probably due to the relaxation of a three-dimensional rigid network by the formation of Si–C and Si–H bonds in the films as well as Ar+ ion bombardment.