Conductivity Enhancement in Organic Electronics by Delta Doping
Conductivity Enhancement in Organic Electronics by Delta Doping
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DOI：
10.1109/led.2016.2620184
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发表时间：
2016-12-01
影响因子：
4.9
通讯作者：
Liu, L. Y.
中科院分区：
文献类型：
--
作者：
Cao, X. A.;Li, X. M.;Liu, L. Y.
通过将周期性的0.5-nm MoO 3层加入到三（4-咔唑基-9-基苯基）胺（TCTA）薄膜中，研究了有机材料中δ掺杂的影响。二次离子质谱分析表明，瞬态扩散的MoO 3到底层TCTA，导致在一个稳定的δ掺杂分布。三角洲掺杂的空穴只有设备表现出大大增强的电流传导沿着和垂直于膜平面相比，均匀掺杂的设备，并具有低至1 V的导通电压。增强的导电性是由于自由空穴积累在潜在的威尔斯中形成的deltadoped区域作为掺杂引起的能级位移的结果。这种独特的掺杂策略可能为开发高电导率的有机传输器件开辟新的前景。
The effects of delta doping in organic materials were investigated by incorporating periodic 0.5-nm MoO3 layers into a Tris(4-carbazoyl-9-ylphenyl)amine (TCTA) thin film. Secondary ion mass spectrometry revealed the transient diffusion of MoO3 into the underlying TCTA, resulting in a stable delta doping profile. Delta-doped hole-only devices exhibited greatly enhanced current conduction along and perpendicular to the film plane compared with a uniformly doped device, and had a turn-on voltage as low as 1 V. The enhanced conductivity is attributed to free hole accumulation in potential wells formed in the deltadoped regions as a result of doping-induced energy level shifts. This unique doping strategy may open new perspectives for developing high-transconductance organic transport devices.