A Single-Ended Resistive $X$ -Band AlGaN/GaN HEMT MMIC Mixer
A Single-Ended Resistive $X$ -Band AlGaN/GaN HEMT MMIC Mixer
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单端电阻 $X$ 波段 AlGaN/GaN HEMT MMIC 混频器
DOI：
10.1109/tmtt.2008.2001958
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
N. Rorsman
中科院分区：
文献类型：
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作者：
M. Sudow;K. Andersson;M. Fagerlind;M. Thorsell;P. Nilsson;N. Rorsman
设计了一种基于AlGaN/GaN单片微波集成电路技术的宽带高线性x波段混频器，并对其进行了加工和表征。该设计基于单端电路拓扑中的4倍100 μ m AlGaN/GaN HEMT。该混频器的中频带宽为2 GHz，在x波段的转换损耗(CL) < 8 dB，在11 GHz时最小CL为6.9 dB。在本地振荡器驱动电平分别为15和23 dBm时，IIP 3电平分别为22和30 dBm，从而体现了大信号性能。在11.6 GHz时可实现9 dB的最小噪声系数。
A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated circuit technology has been designed, processed, and characterized. The design is based on a 4 times 100 mum AlGaN/GaN HEMT in a single-ended circuit topology. The mixer has an IF bandwidth of 2 GHz with a conversion loss (CL) of < 8 dB across the X-band with a minimum CL of 6.9 dB at 11 GHz. The large-signal performance is exemplified by IIP 3 levels of 22 and 30 dBm at local oscillator drive levels of 15 and 23 dBm, respectively. A minimum noise figure of 9 dB is achieved at 11.6 GHz.