Microstructure and electrical property of NaNbO3 ceramics prepared by cold sintering process assisted post-heat-treatment

Microstructure and electrical property of NaNbO3 ceramics prepared by cold sintering process assisted post-heat-treatment
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冷烧结辅助后热处理制备NaNbO3陶瓷的显微结构和电学性能

DOI:
10.1016/j.jallcom.2021.160284
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发表时间:
2021-10
影响因子:
6.2
通讯作者:
Yuezhou Wei
Yuezhou Wei
中科院分区:
材料科学2区
文献类型:
--
作者:
Xinya Tang;Nengneng Luo;Qin Feng;Xiyong Chen;Yuezhou Wei

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NaNbO 3(NN)陶瓷作为一种介电材料受到了广泛的关注,但存在烧结困难的缺点。本文采用冷烧结工艺辅助后热处理(CSP-PHT)制备了高性能NN陶瓷。系统研究了冷烧结工艺(CSP)和后热处理(PHT)对NN陶瓷显微结构和电性能的影响。CSP工艺制备的NN陶瓷致密度高达92.6%,经1230 °C高温高压热处理后,陶瓷致密度提高到96.9%,结晶度提高。特别令人感兴趣的是,通过CSP-PHT制备的NN陶瓷表现出典型的铁电滞回线,其具有34.2 μC/cm 2的大极化,这远高于在1300 °C下常规烧结(CS)方法的值24.8 μC/cm 2。研究表明,CSP-PHT是一种在较低烧结温度下获得高性能NN陶瓷的有效方法。
NaNbO3(NN) ceramics have attracted worldwide attention as a kind of dielectric material, but with the drawbacks of difficulty in sintering. In this work, high performance NN ceramics were achieved by using cold sintering process assisted post-heat-treatment (CSP-PHT). The effects of cold sintering process (CSP) and post-heat-treatment (PHT) of NN ceramics on the microstructure and electrical properties were systematically investigated. High dense NN ceramics with relative density of 92.6% were achieved by CSP, which increased to 96.9% with improved crystallinity after PHT at 1230 °C. Of particular interest is that the NN ceramics prepared by CSP-PHT exhibited typical ferroelectric hysteresis loops with large polarization of 34.2 μC/cm2, which is much higher than the conventional sintering (CS) method at 1300 °C with value of 24.8 μC/cm2. Our work shows that CSP-PHT is an effective method to obtain high-performance NN ceramics at lower sintering temperature.
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