p-n semiconductor membrane for electrically tunable ion current rectification and filtering
p-n semiconductor membrane for electrically tunable ion current rectification and filtering
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DOI：
10.1021/nl0707104
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发表时间：
2007-06-01
期刊：
影响因子：
10.8
通讯作者：
Leburton, Jean-Pierre
中科院分区：
文献类型：
--
作者：
Gracheva, Maria E.;Vidal, Julien;Leburton, Jean-Pierre
我们展示了由两层相反（n-和p-）掺杂的半导体膜可以在纳米孔中进行电可调的离子电流整流和过滤。我们的模型是基于双锥纳米孔静电势的三维泊松方程的解，并结合输运模型。它预测，适当的偏置膜电解质系统，从欧姆行为过渡到急剧整流，漏电流消失是可以实现的。此外，纳米孔的离子电流整流和过滤机制对应于p-n膜中的不同电荷状态，可以通过n层和p层的适当偏置来调节。
We show that a semiconductor membrane made of two thin layers of opposite (n- and p-) doping can perform electrically tunable ion current rectification and filtering in a nanopore. Our model is based on the solution of the 3D Poisson equation for the electrostatic potential in a double-cone nanopore combined with a transport model. It predicts that, for appropriate biasing of the membrane-electrolyte system, transitions from ohmic behavior to sharp rectification with vanishing leakage current are achievable. Furthermore, ion current rectifying and filtering regimes of the nanopore correspond to different charge states in the p-n membrane, which can be tuned with appropriate biasing of the n- and p- layers.