Corona Discharge Assisted Growth Morphology Switching of Tin-Doped Gallium Oxide for Optical Gas Sensing Applications
Corona Discharge Assisted Growth Morphology Switching of Tin-Doped Gallium Oxide for Optical Gas Sensing Applications
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DOI：
10.1021/acs.cgd.9b00678
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发表时间：
2019-11
影响因子：
3.8
通讯作者：
Johannes Reiprich;N. Isaac;Leslie Schlag;M. Hopfeld;G. Ecke;T. Stauden;J. Pezoldt;H. Jacobs
中科院分区：
文献类型：
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作者：
Johannes Reiprich;N. Isaac;Leslie Schlag;M. Hopfeld;G. Ecke;T. Stauden;J. Pezoldt;H. Jacobs
为了使半导体的特性与所需的应用相匹配，控制其晶体结构至关重要。在这里，我们表明，通过实施电晕放电在化学气相沉积…
To match the properties of a semiconductor to a desired application, it is crucial to control its crystal structure. Here, we show that, by implementing a corona discharge in a chemical vapor depos...