Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
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DOI：
10.1063/1.1788897
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发表时间：
2004-09-13
影响因子：
4
通讯作者：
Hosono, H
中科院分区：
文献类型：
--
作者：
Nomura, K;Kamiya, T;Hosono, H
我们用单晶薄膜研究了晶体氧化物半导体InGaO 3（ZnO）（5）中的载流子输运。当载流子浓度小于2 × 10（18）cm（-3）时，电导率的对数与T（-1/4）成正比下降，室温霍尔迁移率低至接近1 cm（2）（Vs）（-1）。当载流子浓度增加到4 × 10 ~（18）cm ~（-3）时，导电机制转变为简并导电，室温霍尔迁移率急剧增加到>10 cm ~（2）（Vs）（-1），表现出金属-绝缘体转变行为。这些结果解释了逾渗导电超过周围导带边缘形成的势垒分布。电位分布是源自InGaO 3（ZnO）（5）的晶体结构中的Ga 3+和Zn 2+离子的随机分布的电位调制的结果。(C)2004年，美国物理学会。
We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)(5) using single-crystalline thin films. When carrier concentration is less than 2x10(18) cm(-3), logarithm of electrical conductivity decreases in proportion to T (-1/4) and room-temperature Hall mobility was as low as similar to1 cm(2)(V s)(-1). When carrier concentration was increased to 4x10(18) cm(-3), the conduction mechanism changed to degenerate conduction and room-temperature Hall mobility was steeply increased to >10 cm(2)(Vs)(-1), showing metal-insulator transition behavior. These results are explained by percolation conduction over distribution of potential barriers formed around conduction band edge. The potential distribution is a consequence of potential modulation originating from random distribution of Ga3+ and Zn2+ ions in the crystal structure of InGaO3(ZnO)(5). (C) 2004 American Institute of Physics.