Field-Induced Metallic State in YbB12 under High Magnetic Field
Field-Induced Metallic State in YbB12 under High Magnetic Field
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高磁场下 YbB12 的场致金属态
DOI：
10.1143/jpsj.57.3946
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发表时间：
1988
影响因子：
1.7
通讯作者：
M. Date
中科院分区：
文献类型：
--
作者：
K. Sugiyama;F. Iga;M. Kasaya;T. Kasuya;M. Date
研究了YbB 12在低温下高达550 kOe的高场磁化强度和磁电阻，特别关注场下的半导体带隙能量。非常大的负磁阻被发现，该系统是完美的金属约500 kOe的磁化强度异常增加。实验结果解释通过引入的模型，由f-和传导电子的混合产生的带隙被破坏的施加场和释放的f-电子给出了一个异常的磁化。f能级的g J值估计为1.9，这意味着\（\varGamma_{8}\）可能最有利于费米能级处的f电子。
High field magnetization and magnetoresistance of YbB 12 are investigated up to 550 kOe at low temperatures with special interest in the semiconductive band gap energy under the field. Very large negative magnetoresistance is found and the system is perfectly metallic around 500 kOe with anomalous increase in the magnetization. The experimental results are explained by introducing the model that the band gap produced by the mixing of the f- and conduction electrons is destroyed by applying the field and the released f-electron gives an anomalous magnetization. The g J -value is estimated as 1.9 for the f-level and this means that \(\varGamma_{8}\) may be most favourable for the responsible f-electron at the Fermi energy.