Internal Electric-Field-Lines Distribution in CdZnTe Detectors Measured Using X-Ray Mapping
Internal Electric-Field-Lines Distribution in CdZnTe Detectors Measured Using X-Ray Mapping
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DOI：
10.1109/tns.2008.2007904
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发表时间：
2009-06-01
影响因子：
1.8
通讯作者：
James, R. B.
中科院分区：
文献类型：
--
作者：
Bolotnikov, A. E.;Camarda, G. S.;James, R. B.
CdZnTe器件的理想操作需要具有均匀分布的内部电场。这种均匀性对于厚的长漂移长度检测器（诸如大体积CPG和3-D多像素器件）尤其关键。利用高空间分辨率的X射线成像技术，我们研究了真实的器件中的电场分布。我们的测量表明，在< 5 mm的薄检测器中，电场线倾向于远离侧表面弯曲（即，聚焦效果）。在厚探测器中，> 1 cm，具有大的纵横比（厚宽比），我们观察到两种效应：电场线弯曲远离或朝向侧表面，我们分别称之为聚焦场线分布和散焦场线分布。除了这些大规模的变化，场线分布的存在下，扩展的缺陷和残余应变存在的晶体内部的局部扰动。我们提出我们的数据清楚地表明内部电场的不均匀性。
The ideal operation of CdZnTe devices entails having a uniformly distributed internal electric field. Such uniformity especially is critical for thick long-drift-length detectors, such as large-volume CPG and 3-D multi-pixel devices. Using a high-spatial resolution X-ray mapping technique, we investigated the distribution of the electric field in real devices. Our measurements demonstrate that in thin detectors, < 5 mm, the electric field-lines tend to bend away from the side surfaces (i.e., a focusing effect). In thick detectors, > 1 cm, with a large aspect ratio (thickness-to-width ratio), we observed two effects: the electric field lines bending away from or towards the side surfaces, which we called, respectively, the focusing field-line distribution and the defocusing field-line distribution. In addition to these large-scale variations, the field-line distributions were locally perturbed by the presence of extended defects and residual strains existing inside the crystals. We present our data clearly demonstrating the non-uniformity of the internal electric field.