ZnSb-based thin films prepared by ns-PLD for thermoelectric applications
ZnSb-based thin films prepared by ns-PLD for thermoelectric applications
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DOI：
10.1016/j.apsusc.2016.09.121
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发表时间：
2017-10-01
影响因子：
6.7
通讯作者：
Trucchi, D. M.
中科院分区：
文献类型：
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作者：
Bellucci, A.;Mastellone, M.;Trucchi, D. M.
采用脉冲激光沉积（PLD）技术，利用ns-ArF激光器（193 nm）和多靶沉积系统制备了锑化锌基纳米结构薄膜。通过在ZnSb基体中加入不同的掺杂剂（Cr, Ag），制备出多层结构的薄膜。在300 ~ 600 K的温度范围内，研究了掺杂剂的引入对沉积膜结构、组成和电子性能的影响。当掺杂剂浓度为5 at时，薄膜的功率因数（PF）。在600 K下，与未掺杂薄膜相比，W/mK(2)显著增加到100-200亩。(C) 2016 Elsevier B.V.版权所有
Zinc antimonide-based nanostructured thin films were produced by Pulsed Laser Deposition (PLD) using a ns-ArF laser (193 nm) and a multi-target deposition system. The films were prepared according to a multi layer structure, obtained by adding different dopants (Cr, Ag) within the ZnSb matrix. The influence of the dopant introduction on the structural, compositional and electronic properties of the deposited films was studied in the temperature range 300-600 K. The power factor (PF) of films with dopant concentration of 5 at.% resulted significantly increased up to 100-200 mu W/mK(2) at 600 K with respect to that of undoped films. (C) 2016 Elsevier B.V. All rights reserved.