Formation of SiO:CH Ultra Water Repellent Thin Films by Inductively Coupled RF PECVD
Formation of SiO:CH Ultra Water Repellent Thin Films by Inductively Coupled RF PECVD
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电感耦合 RF PECVD 形成 SiO:CH 超防水薄膜
DOI：
10.5916/jkosme.2011.35.3.323
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
Yongsup Yun
中科院分区：
文献类型：
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作者：
Yongsup Yun
本文采用射频等离子体增强化学气相沉积法（RFPECVD）制备了超宽谱薄膜。讨论了沉积条件与薄膜形貌、化学性质等性能的关系。此外，从OES等离子体诊断的分析，UWR薄膜的形成机制进行了讨论。
In this paper, the UWR thin films were prepared by RF PECVD. The relationships between the deposition conditions and the film properties such as morphological and chemical properties of the films were discussed. Moreover, from the analysis of plasma diagnostics using OES, formation mechanism of UWR thin films was discussed.
影响因子：
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作者：
Katsuya Teshima;H. Sugimura;Y. Inoue;O. Takai;A. Takano
通讯作者：
Katsuya Teshima;H. Sugimura;Y. Inoue;O. Takai;A. Takano