Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene Derivatives
Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene Derivatives
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DOI：
10.1143/apex.2.111501
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发表时间：
2009-11-01
影响因子：
2.3
通讯作者：
Takeya, Jun
中科院分区：
文献类型：
--
作者：
Uemura, Takafumi;Hirose, Yuri;Takeya, Jun
随着[1]苯并噻吩并[3，2-B]苯并噻吩衍生物的高度取向结晶膜的生长方法的发展，在溶液处理的有机薄膜晶体管中实现了高达5 cm（2）/（VS）的场效应迁移率。将溶液的液滴保持在倾斜衬底上的结构的边缘处，使得结晶域在倾斜方向上生长。定向生长实现了优异的分子有序性，由于材料的自组织功能，这种有序性表现在表面上的微米级分子平台上。使用简单的制造工艺实现的前所未有的性能增加了有机薄膜晶体管在工业应用中的吸引力。(C)2009日本应用物理学会
Field-effect mobility as high as 5 cm(2)/(V S) is achieved in solution-processed organic thin-film transistors with the development of a method for growing highly-oriented crystalline films of [1]benzothieno[3,2-b]benzothiophene derivatives. A droplet of the solution is sustained at an edge of a structure on an inclined substrate, so that the crystalline domain grows in the direction of inclination. The oriented growth realizes excellent molecular ordering that manifests itself in micrometer-scale molecular terraces on the surface as a result of the self-organizing function of the material. The unprecedented performance achieved using an easy fabrication process has increased attractiveness of organic thin-film transistors for industrial applications. (C) 2009 The Japan Society of Applied Physics