Tuning of electron injections for n-type organic transistor based on charge-transfer compounds
Tuning of electron injections for n-type organic transistor based on charge-transfer compounds
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DOI：
10.1063/1.1863434
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发表时间：
2005-02
影响因子：
4
通讯作者：
Y. Takahashi;T. Hasegawa;Y. Abe;Y. Tokura;K. Nishimura;G. Saito
中科院分区：
文献类型：
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作者：
Y. Takahashi;T. Hasegawa;Y. Abe;Y. Tokura;K. Nishimura;G. Saito
设计了一种高迁移率（~ 1.0cm ~ 2）的n型有机场效应晶体管，它是由半导体和金属电荷转移（CT）化合物组成，即DBTTF-TCNQ晶体作为沟道，TTF-TCNQ薄膜作为载流子注入电极。与传统的电极材料的器件的场效应特性的比较表明，成功地演示了界面带工程与CT材料的使用。
A high mobility (∼1.0cm2∕Vs) n-type organic field-effect transistor is devised in terms of the combination of semiconducting and metallic charge-transfer (CT) compounds, namely, DBTTF-TCNQ crystals as channels and TTF-TCNQ thin films as electrodes for carrier injections on top of the crystals. Comparison of the field-effect properties for devices with conventional electrode materials indicates the successful demonstration of the interface band engineering with use of the CT materials.