Low Temperature Synthesized Quaternary Chalcogenide Cu2ZnSnS4 from Nano-Crystallite Binary Sulfides
Low Temperature Synthesized Quaternary Chalcogenide Cu2ZnSnS4 from Nano-Crystallite Binary Sulfides
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DOI：
10.1149/1.3598168
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发表时间：
2011-01-01
影响因子：
3.9
通讯作者：
Gong, Hao
中科院分区：
文献类型：
--
作者：
Wang, Yu;Gong, Hao
四元硫族化合物Cu 2 ZnSnS 4（CZTS）是一种潜在的高性价比太阳能电池吸收材料。在这项研究中，CZTS已成功地通过低温退火的CuS，ZnS和SnS纳米微晶，这是由一个简单的化学浴沉积技术生产的二元硫化物。CZTS的实现的形成温度为300 ° C，其显著低于报道的值。通过X射线衍射（XRD）、拉曼光谱和扫描透射电子显微镜（STEM）中的元素图谱表征技术研究了CZTS的形成。样品退火在石英管中在1.0 × 10（-2）Torr下进行，而不使用传统的有毒、腐蚀性和易燃的H2S气体。通过在高达450摄氏度的温度下退火，实现了CZTS结晶度的显著改善。然而，在500 ℃退火后，在CZTS中发现痕量的Cu 2S。研究了CZTS的光学和电学性质。CZTS样品显示出1.47 eV的直接带隙、p型导电和1.06 Ω. cm的电阻率。(C)2011年电化学学会。[DOI：10.1149/1.3598168]保留所有权利。
The quaternary chalcogenide Cu2ZnSnS4 (CZTS) is known to be a potential cost-effective absorber material in solar cells. In this study, CZTS has been successfully synthesized by low temperature annealing of binary sulfides of CuS, ZnS and SnS nano-crystallites which were produced by a simple chemical bath deposition technique. The achieved formation temperature of CZTS was 300 degrees C, which was significantly lower than reported values. The formation of CZTS was investigated through characterization techniques - x-ray diffraction (XRD), Raman spectroscopy and elemental mapping in scanning transmission electron microscopy (STEM). Sample annealing was performed in a Quartz tube under 1.0 x 10(-2) Torr without using the traditional toxic, corrosive and flammable H2S gas. Significant improvement in CZTS crystallinity was achieved through annealing at temperatures up to 450 degrees C. However, traces of Cu2S in CZTS were found after annealing at 500 degrees C. The optical and electrical properties of CZTS were also investigated. The CZTS sample showed a direct band gap of 1.47 eV, p-type conduction and a resistivity of 1.06 Omega.cm. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3598168] All rights reserved.