Properties of Chemically Vapor-Deposited Amorphous SiNx Alloys
Properties of Chemically Vapor-Deposited Amorphous SiNx Alloys
复制标题
化学气相沉积非晶 SiNx 合金的性能
DOI：
10.1143/jjap.21.1394
复制
发表时间：
1982
期刊：
影响因子：
--
通讯作者：
A. Sasaki
中科院分区：
文献类型：
--
作者：
G. Sasaki;M. Kondo;S. Fujita;A. Sasaki
采用Ar/≦_4/NH_3混合气体在5 5 0℃热分解的方法制备了非晶态SiNx(x SiH4 0.6)合金，并对其光学和电学性质进行了研究。随着氮原子浓度的增加，光学禁带能从1.5 eV二次增加到2.0 eV。氮的掺入使跃迁电导显著降低，而对扩展态电导影响不大。氮掺杂对量子效率、迁移率和寿命的影响不大。
Amorphous SINx (x≦0.6) alloys were deposited by thermal decomposition of Ar/SiH4/NH3 mixtures at 550°C, and their optical and electrical properties were investigated. The optical gap energy increased quadratically from 1.5 eV to 2.0 eV with the incorporated nitrogen atom concentration. The nitrogen incorporation caused a remarkable reduction in the hopping conduction, whereas it had little effect on the extended-state conduction. The products of quantum efficiency, mobility, and lifetime were little influenced by the nitrogen incorporation.