An ultraviolet photoelectron spectroscopy study on bandgap broadening of epitaxial graphene on SiC with surface doping
An ultraviolet photoelectron spectroscopy study on bandgap broadening of epitaxial graphene on SiC with surface doping
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DOI：
10.1016/j.carbon.2019.10.043
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发表时间：
2020-02
期刊：
影响因子：
10.9
通讯作者：
Yanfei Hu;Jialin Liu;Wentao Dou;Kaili Mao;Lixin Guo;Laiyuan Chong;Jichao Hu;Hao Yuan;
中科院分区：
文献类型：
--
作者：
Yanfei Hu;Jialin Liu;Wentao Dou;Kaili Mao;Lixin Guo;Laiyuan Chong;Jichao Hu;Hao Yuan;
在4H-SiC(0001)衬底上热生长的石墨烯可以通过一种新的电荷转移机制来加宽带隙，在外延石墨烯生长之前，通过在衬底掺杂来改变缓冲层和表面。基于同步辐射的高分辨率光电子能谱表明，外延石墨烯的带隙展宽是由于外延石墨烯和衬底之间的缓冲层的修饰，施主-受主原子和体原子注入到碳化硅中都使这些衬底上的EG禁带展宽。这种通过衬底掺杂实现禁带展宽的新机制将为未来的电子应用提供一种简单有效的非破坏性展宽外延石墨烯禁带的方法。
The bandgap of epitaxial graphene thermally grown on 4H–SiC(0001) can be widened via a novel charge transfer mechanism by modifying the buffer layer and surface of SiC with substrate doping before epitaxial graphene growth. High-resolution photoemission spectroscopy base on synchrotron radiation reveal that the bandgap broadening of epitaxial graphene is attributed to modification of buffer layer between epitaxial graphene and the substrates, and both donor-acceptor and bulk atoms injected in the SiC make the bandgap of EG on those substrates broaden. This novel bandgap broadening mechanism via substrates doping will provide a simple and effective approach to nondestructively broad the bandgap of epitaxial graphene for future electronics application.