X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition
X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition
复制标题
脉冲激光沉积玻璃上薄膜 GaAs 的 X 射线、吸收和光电流特性
DOI：
10.1088/0268-1242/19/11/019
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发表时间：
2004
影响因子：
1.9
通讯作者：
B. Ullrich
中科院分区：
文献类型：
--
作者：
A. Erlacher;M. Ambrico;V. Capozzi;V. Augelli;H. Jaeger;B. Ullrich
采用脉冲激光沉积技术，在玻璃上沉积了薄膜砷化镓薄膜。X射线分析表明，该材料为多晶织构，晶体尺寸为58 nm。用标准的恒定光电流测量了薄膜的吸收，并用锁定技术测量了光电流本身。吸收和光电流直接用状态函数的晶体密度和乌尔巴赫尾巴来模拟。这项工作揭示了脉冲激光沉积在玻璃上形成用于光学应用的高质量GaAs膜的能力。
By employing pulsed-laser deposition, thin-film GaAs on glass has been deposited. X-ray analysis showed that the material has a polycrystalline texture with a crystal size of 58 nm. The absorption of the film has been measured by standard constant photocurrent measurements and the photocurrent itself with the lock-in technique. Absorption and photocurrent have been straightforwardly modelled with the crystalline density of state function and Urbach's tail. The work reveals the capability of pulsed-laser deposition to form high-quality GaAs films on glass for optical applications.