First observation of the B1A1 state of SiH2 and SiD2 radicals by optical-optical double resonance spectroscopy.
First observation of the B1A1 state of SiH2 and SiD2 radicals by optical-optical double resonance spectroscopy.
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首次通过光学-光学双共振光谱观察到 SiH2 和 SiD2 自由基的 B1A1 态。
DOI：
10.1063/1.1881172
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发表时间：
2005
影响因子：
4.4
通讯作者：
N. Mikami
中科院分区：
文献类型：
--
作者：
Y. Muramoto;H. Ishikawa;N. Mikami
利用光-光双共振技术首次观察到SiH_2和SiD_2的B_1A_1态。SiD 2的B态的电子能带原点被确定为27 214.11 cm（-1）。在光谱中观察到一个非常明显的依赖于弯曲振动量子数的奇偶值的排他性行为，代表了B态的准线性行为。通过对SiD 2的弯曲振动能级结构的准线性分析，估计线性势垒高度约为125 cm（-1）。
The B1A1 state of SiH2 and SiD2 was observed by the optical-optical double resonance technique for the first time. The electronic band origin of the B state of SiD2 was determined to be 27 214.11 cm(-1). A very clear exclusive behavior depending on the even/odd value of the bending vibrational quantum number was observed in the spectra, representing a quasilinear behavior of the B state. The barrier height to linearity was estimated to be approximately 125 cm(-1) by the quasilinear analysis of the bending vibrational level structure of SiD2.