Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures
Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures
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间隔层生长温度对多层InAs∕GaAs量子点结构的影响
DOI：
10.1063/1.1773378
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发表时间：
2004
影响因子：
3.2
通讯作者：
M. S. Skolnick
中科院分区：
文献类型：
--
作者：
H. Liu;I. Sellers;M. Gutiérrez;K. Groom;W. M. Soong;M. Hopkinson;J. David;R. Beanland;T. Badcock;D. Mowbray;M. S. Skolnick
研究了多层量子点结构中间隔层的生长温度，以获得完全相同的间隔层。一个5层1.3 μ mInAs scinGaAs量子点结构和50 nm GaAs SPL作为模型系统。结果表明，GaAs SPL的生长温度对InAs量子点的结构和光学性质都有显著的影响。对于在510°C的低温下生长的GaAs SPL，在第二层和随后的层中观察到位错，这是下面的间隔层中的显著表面粗糙度的结果。然而，通过将50-nm GaAs SPL的最后35 nm的生长温度提高到580°C，实现了更光滑的表面，允许制造基本相同的无缺陷QD层。抑制缺陷的形成提高了1.3 μm多层InAs ScinGaAs量子点激光器的室温光致发光效率和性能。一个非常低的连续波室温阈值电流密度为39 A scincm ~ 2。
The growth temperature of spacer layers (SPLs) is investigated as a means to obtain identical layers for multilayer quantum dot (QD) structures. A 5-layer 1.3-μm InAs∕GaAs QD structure with 50-nm GaAs SPLs served as a model system. It is found that the growth temperature of the GaAs SPLs has pronounced effects on both the structural and optical properties of the InAs QDs. For GaAs SPLs grown at a low temperature of 510°C, dislocations are observed in the second and subsequent layers, a result of significant surface roughness in the underlying spacer layer. However by increasing the growth temperature to 580°C for the final 35nm of the 50-nm GaAs SPLs, a much smoother surface is achieved, allowing the fabrication of essentially identical, defect free QD layers. The suppression of defect formation enhances both the room-temperature photoluminescence efficiency and the performance of 1.3-μm multilayer InAs∕GaAs QD lasers. An extremely low continue-wave room-temperature threshold current density of 39A∕cm2 is...