Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite
Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite
复制标题
基于黑磷量子点和富勒烯衍生物复合材料的光电双响应非易失性存储器件
DOI：
10.1002/aelm.202101143
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发表时间：
2021-12
影响因子：
6.2
通讯作者：
Jinyong Li;Jie Hou;Bin Zhang;Yu Chen
中科院分区：
文献类型：
--
作者：
Jinyong Li;Jie Hou;Bin Zhang;Yu Chen
Low‐dimensional nanomaterials have attracted attention due to their excellent electrical and optical properties. The development of nonvolatile memory device based on low‐dimensional nanomaterials is important for establishing high‐performance computers. In this work, black phosphorus quantum dots (BPQDs) are physically blended with the fullerene derivative [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM), and then polyvinylpyrrolidone (PVP) is added to enhance the film‐forming properties of the material. The resulting composite thin film is sandwiched between aluminum and indium‐tin oxide (ITO) electrodes to form an Al/BPQDs/PCBM/PVP/ITO device. The device exhibits stable nonvolatile rewritable memory behavior, with on and off threshold voltages of −2.4 and +3.25 V, respectively, and an on/off ratio exceeding 103. In addition, the device exhibits a lower threshold voltage and higher conductivity upon increasing the light intensity under laser irradiation at 450 nm. Light‐induced electron paramagnetic resonance and fluorescence spectroscopy show that the existence of electric field‐induced charge transfer and light‐induced charge transfer in the composite thin film are responsible for the device's photoelectric dual‐response resistive characteristics.
