A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C
A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C
复制标题
完全集成的碳化硅 Sigma-Delta 调制器，工作温度高达 500 °C
DOI：
10.1109/ted.2017.2700632
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发表时间：
2017
影响因子：
3.1
通讯作者：
C. Zetterling
中科院分区：
文献类型：
--
作者：
Ye Tian;C. Zetterling
本文介绍了第一个采用内部碳化硅(SIC)双极技术实现的用于高温应用的全集成Sigma-Delta调制器。采用二阶1-b连续时间结构。采用双环补偿技术来适应一个时钟周期的比较器延迟。考虑到器件参数在较大温度范围内的变化，这些电路在不降低调制器性能的情况下具有足够的容限。测试结果表明，在512 kHz的时钟频率下，从室温到500°C，调制器的峰值SNDR恒定在30d B左右。该调制器的芯片面积为$6.9~\TEXT{mm}\×2.8$mm，带有一层金属层。它在15V电源下的功耗约为1W。本文论证了进一步开发用于极高温传感应用的高集成度碳化硅双极型晶体管集成电路的可行性。
This paper presents the first fully integrated sigma–delta modulator implemented in an in-house silicon carbide (SiC) bipolar technology for high-temperature applications. A second-order 1-b continuous-time architecture is adopted. Dual-loop compensation technique is employed to accommodate one clock period comparator delay. The circuits are designed to have enough margins without degrading the modulator’s performance, considering the variation of device parameters over a large temperature range. The measurement results show that from room temperature to 500 °C, the modulator’s peak SNDR is constant around 30 dB at a clock speed of 512 kHz. The chip area of the modulator is $6.9~\text {mm} \times 2.8$ mm with one metal layer. It consumes around 1 W from a 15 V power supply. This paper demonstrates the feasibility to further develop highly integrated SiC bipolar junction transistor integrated circuits for extremely high-temperature sensing applications.