Gallium doping dependence of single-crystal n-type Zno grown by metal organic chemical vapor deposition
Gallium doping dependence of single-crystal n-type Zno grown by metal organic chemical vapor deposition
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DOI：
10.1016/j.jcrysgro.2005.06.030
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发表时间：
2005-10-01
影响因子：
1.8
通讯作者：
Ye, YD
中科院分区：
文献类型：
--
作者：
Ye, JD;Gu, SL;Ye, YD
采用低压金属有机化学气相沉积（MOCVD）技术在（0002）蓝宝石衬底上外延生长了高质量的Ga掺杂ZnO单晶薄膜。研究了Ga掺杂浓度对薄膜结构、电学和光学性质的影响。当Ga/Zn气体比为3.2at%时，薄膜的ZnO（0002）峰线宽为0.26 °，载流子浓度为2.47 × 10 ~（19）cm ~（-3），光学透过率超过90%。载流子浓度急剧增加，并在较高的掺杂水平变得饱和，由于载流子补偿的开始。吸收边能量的Burstein-Moss蓝移随着载流子浓度的增加而增加，达到2.47 × 10 ~（19）cm ~（-3）。此外，还观察到掺杂诱导的光致发光（PL）发射线宽展宽和带隙重整化（BGR）效应。随着Ga掺杂浓度的增加，PL发射强度降低，这被认为是掺杂增强的非辐射复合率的直接结果。(c)2005 Elsevier B. V.保留所有权利。
High-quality single-crystal Ga-doped ZnO films have been epitaxially deposited on (0002) sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD) technique. The dependence of structural, electrical and optical properties of films on Ga doping concentration was investigated. As grown at the Ga/Zn gas ratio of 3.2at%, the film shows a narrow linewidth of 0.26 degrees for ZnO (0002) peak, high carrier concentration of 2.47 x 10(19) cm(-3), and high optical transparency over 90%. The carrier concentration increased sharply and became saturated at higher doping level due to the onset of carrier compensation. The Burstein-Moss blueshift of the absorption edge energy increased as expected with the carrier concentration up to 2.47 x 10(19) cm(-3). In addition, doping-induced photo luminescence (PL) emission linewidth broadening and bandgap renormalization (BGR) effects have also been observed. The intensity of PL emission decreased with increasing Ga dopant concentration, which was believed to be a direct consequence of the doping-enhanced nonradiative recombination rates. (c) 2005 Elsevier B.V. All rights reserved.