Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS2 Heterostructures
Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS2 Heterostructures
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DOI：
10.1021/nn402919d
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发表时间：
2013-08-01
期刊：
影响因子：
17.1
通讯作者：
Ihm, G.
中科院分区：
文献类型：
--
作者：
Myoung, Nojoon;Seo, Kyungchul;Ihm, G.
垂直石墨烯异质结构已经通过使用量子隧穿被引入作为电子器件的替代架构。在这里，我们提出，电流开/关比的垂直石墨烯场效应晶体管的增强，通过使用扶手椅型石墨烯纳米管作为电极。此外，我们报告的石墨烯/二硫化钼异质结的自旋相关的隧穿电流。当夹在石墨烯电极之间的原子级薄的MoS 2层变得具有磁性时，具有不同自旋的狄拉克费米子会感受到隧道势垒的不同高度，从而导致自旋相关的隧道效应。我们的发现将通过提高器件性能和增加基于石墨烯的自旋电子学的可能性来发展目前用于电子器件的石墨烯异质结构。
Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced, by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.